SI7946DP-T1-GE3
MOSFET 2N-CH 150V 2.1A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI7946DP-T1-GE3 is a dual N-channel MOSFET array designed for high-efficiency power management applications. This device features a 150V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 2.1A at 25°C, with a maximum power dissipation of 1.4W. The Rds(On) is specified at 150mOhm at 3.3A and 10V, enabling low conduction losses. The MOSFET array is constructed using Vishay's advanced TrenchFET® technology, offering a logic-level gate for compatibility with lower voltage control signals. Key electrical parameters include a Gate Charge (Qg) of 20nC at 10V and a threshold voltage (Vgs(th)) of 4V at 250µA. The component is housed in a PowerPAK® SO-8 Dual package, suitable for surface mounting and optimized for thermal performance. Operating temperature range is from -55°C to 150°C. This component is widely utilized in industrial power supplies, automotive electronics, and energy-efficient computing systems. The SI7946DP-T1-GE3 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 2.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 3.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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