SI7946DP-T1-E3
MOSFET 2N-CH 150V 2.1A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET array, part number SI7946DP-T1-E3, features a dual N-channel configuration within a PowerPAK® SO-8 Dual package. This device offers a continuous drain current of 2.1A at 25°C and a drain-to-source voltage (Vdss) of 150V. With a maximum power dissipation of 1.4W and a low Rds(On) of 150mOhm at 3.3A and 10V, it is optimized for efficient power switching. The logic level gate feature simplifies drive requirements, and the device has a typical gate charge of 20nC at 10V. Operating temperature ranges from -55°C to 150°C. This MOSFET array is suitable for applications in power management, industrial equipment, and automotive systems. The component is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 2.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 3.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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