SI7946ADP-T1-GE3
MOSFET 2N-CH 150V 7.7A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI7946ADP-T1-GE3 is a dual N-channel Power MOSFET array designed for high-efficiency power conversion applications. This device features a 150V drain-source breakdown voltage and a continuous drain current capability of 7.7A at a case temperature of 25°C, with a maximum power dissipation of 19.8W. The low on-resistance of 186mOhm at 3A and 10V gate-source voltage, coupled with a 6.5nC maximum gate charge, ensures minimal conduction and switching losses. Its 230pF input capacitance and 3.5V threshold voltage are optimized for robust performance. Packaged in a surface-mount PowerPAK® SO-8 Dual, this component is suitable for demanding applications in automotive, industrial, and consumer electronics sectors requiring compact and efficient power management solutions. The device operates across a wide temperature range of -55°C to 150°C and is supplied in a Tape & Reel (TR) configuration.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 19.8W |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 75V |
| Rds On (Max) @ Id, Vgs | 186mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 7.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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