SI7945DP-T1-GE3
MOSFET 2P-CH 30V 7A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI7945DP-T1-GE3 is a dual P-channel MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-to-source voltage and a continuous drain current capability of 7A at 25°C. With a low on-resistance of 20mOhm maximum at 10.9A and 10V, it minimizes conduction losses. The logic-level gate input simplifies drive requirements. Housed in a PowerPAK® SO-8 Dual surface-mount package, this device offers excellent thermal performance with a maximum power dissipation of 1.4W. The operating temperature range is -55°C to 150°C. This MOSFET array is commonly utilized in automotive, industrial, and consumer electronics power management solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 10.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 74nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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