SI7945DP-T1-E3
MOSFET 2P-CH 30V 7A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET SI7945DP-T1-E3 is a dual P-channel MOSFET array designed for demanding power management applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 7A at 25°C. The low on-resistance of 20mOhm is achieved at 10.9A and 10V Vgs, contributing to reduced conduction losses. With a logic level gate, it facilitates direct interface with lower voltage control signals. The PowerPAK® SO-8 Dual package provides excellent thermal performance with a maximum power dissipation of 1.4W. This MOSFET array is commonly utilized in automotive, industrial, and consumer electronics for applications such as load switching, battery management, and power distribution. The device operates across a wide temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 10.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 74nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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