SI7940DP-T1-E3
MOSFET 2N-CH 12V 7.6A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI7940DP-T1-E3 is a dual N-channel power MOSFET designed for efficient power switching applications. This component features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 7.6A at 25°C. With a low Rds(on) of 17mOhm at 11.8A and 4.5V Vgs, it minimizes conduction losses. The device supports logic-level gate drive, simplifying interface requirements. Key parameters include a maximum gate charge (Qg) of 17nC at 4.5V and a threshold voltage (Vgs(th)) of 1.5V at 250µA. Packaged in a PowerPAK® SO-8 Dual for surface mounting, this MOSFET handles a maximum power dissipation of 1.4W and operates across a temperature range of -55°C to 150°C. Applications include battery management, power supplies, and portable electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 11.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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