SI7925DN-T1-E3
MOSFET 2P-CH 12V 4.8A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI7925DN-T1-E3 is a 2 P-Channel MOSFET array designed for high-efficiency power management. This device features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.8A at 25°C. The low on-resistance of 42mOhm maximum at 6.5A and 4.5V (Vgs) ensures minimal power loss. With a logic level gate, it is suitable for direct drive from microcontrollers. The TrenchFET® technology offers improved performance and reduced switching losses. The 1.3W maximum power dissipation and -55°C to 150°C operating temperature range make it robust for demanding applications. Packaged in the PowerPAK® 1212-8 Dual surface-mount configuration and supplied on tape and reel, this component is utilized in automotive, industrial, and consumer electronics power switching applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 6.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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