SI7913DN-T1-GE3
MOSFET 2P-CH 20V 5A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI7913DN-T1-GE3 is a dual P-channel power MOSFET with a 20V drain-source breakdown voltage and a continuous drain current capability of 5A at 25°C. This device, housed in a PowerPAK® 1212-8 Dual package, features a low Rds(on) of 37mOhm at 7.4A and 4.5V Vgs, optimized for efficient power switching. The logic-level gate drive and a maximum gate charge of 24nC at 4.5V Vgs facilitate operation with lower gate drive voltages. With a maximum power dissipation of 1.3W and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for applications in power management, battery charging, and load switching within automotive and industrial sectors. The component is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 7.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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