SI7911DN-T1-GE3
MOSFET 2P-CH 20V 4.2A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI7911DN-T1-GE3 is a TrenchFET® series P-channel MOSFET array. This dual device features a 20V drain-source voltage rating and a continuous drain current capability of 4.2A at 25°C. The MOSFET array offers a low on-resistance of 51mOhm maximum at 5.7A and 4.5V Vgs, with a logic level gate feature. It is housed in a PowerPAK® 1212-8 Dual package designed for surface mounting, providing 1.3W maximum power dissipation. The operating temperature range is -55°C to 150°C. This component is suitable for applications in power management, battery protection, and load switching within the consumer electronics and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 51mOhm @ 5.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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