SI7911DN-T1-E3
MOSFET 2P-CH 20V 4.2A 1212-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI7911DN-T1-E3 is a dual P-channel MOSFET designed for efficient power switching applications. This component features a 20V drain-source voltage rating and a continuous drain current capability of 4.2A at 25°C. With a low Rds(on) of 51mOhm at 5.7A and 4.5V Vgs, it minimizes conduction losses. The logic-level gate input simplifies driving from microcontrollers. The device is housed in a PowerPAK® 1212-8 Dual package, facilitating compact surface-mount designs. Its 1.3W maximum power dissipation and 15nC maximum gate charge are critical parameters for power management solutions in automotive, industrial, and consumer electronics. The Vishay Siliconix SI7911DN-T1-E3 is supplied in cut tape packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 51mOhm @ 5.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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