SI7909DN-T1-GE3
MOSFET 2P-CH 12V 5.3A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI7909DN-T1-GE3 is a PowerPAK® 1212-8 Dual MOSFET array featuring two P-channel, 12V devices. Each channel offers a continuous drain current of 5.3A at 25°C with a maximum Rds(on) of 37mOhm at 7.7A and 4.5V Vgs. This device supports logic-level gate drive, with a typical gate charge of 24nC at 4.5V Vgs and a threshold voltage of 1V at 700µA. Rated for 1.3W maximum power dissipation, it operates from -55°C to 150°C. The surface mount PowerPAK® 1212-8 Dual package is supplied on tape and reel. This component is suitable for power management applications in consumer electronics and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 7.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 700µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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