SI7905DN-T1-GE3
MOSFET 2P-CH 40V 6A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI7905DN-T1-GE3 is a dual P-channel MOSFET array designed for efficient power management applications. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 6A at 25°C. The on-resistance (Rds On) is specified at a maximum of 60mOhm when driven at 5A and 10V Vgs. With a maximum power dissipation of 20.8W, it is housed in a surface-mount PowerPAK® 1212-8 Dual package, facilitating compact board designs. Key electrical parameters include a gate charge (Qg) of 30nC at 10V and an input capacitance (Ciss) of 880pF at 20V. The operating temperature range is -55°C to 150°C. This component finds application in battery management, power distribution, and load switching within automotive and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 20.8W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 20V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |