SI7904DN-T1-GE3
MOSFET 2N-CH 20V 5.3A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, part number SI7904DN-T1-GE3, features dual N-channel configuration with a 20V drain-source voltage rating. This device offers a continuous drain current of 5.3A at 25°C and a maximum power dissipation of 1.3W. The Rds On is specified at 30mOhm at 7.7A and 4.5V, with a logic level gate functionality. The input capacitance (Ciss) is not specified. The MOSFET operates within a temperature range of -55°C to 150°C. The device is housed in a PowerPAK® 1212-8 Dual surface mount package and is supplied on tape and reel. It finds application in power management, automotive, and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 7.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 935µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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