SI7904BDN-T1-E3
MOSFET 2N-CH 20V 6A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI7904BDN-T1-E3 is a dual N-channel power MOSFET array designed for demanding applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 6A at 25°C. The device boasts a low on-resistance of 30mOhm maximum at 7.1A and 4.5V Vgs, contributing to high power efficiency. With a logic level gate, it is suitable for direct drive from low-voltage microcontrollers. Key parameters include a maximum power dissipation of 17.8W and a gate charge of 24nC at 8V. The input capacitance (Ciss) is 860pF maximum at 10V. This Vishay Siliconix MOSFET array is housed in a PowerPAK® 1212-8 Dual surface mount package, supplied on tape and reel. Its robust construction and performance characteristics make it suitable for use in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 17.8W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 860pF @ 10V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 7.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 8V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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