SI7901EDN-T1-E3
MOSFET 2P-CH 20V 4.3A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI7901EDN-T1-E3 is a dual P-channel MOSFET designed for high-efficiency power management applications. This component features a 20V Vds rating and a continuous drain current capability of 4.3A at 25°C. The device exhibits a low Rds(on) of 48mOhm at 6.3A and 4.5V Vgs, ensuring minimal power dissipation. With a logic-level gate, it is suitable for direct interfacing with low-voltage control signals. The MOSFET array is housed in a compact PowerPAK® 1212-8 Dual surface-mount package, facilitating dense board layouts. Key parameters include a maximum power dissipation of 1.3W and a gate charge of 18nC at 4.5V. This Vishay Siliconix MOSFET is utilized in various industries including automotive, industrial, and consumer electronics for battery management, load switching, and power sequencing. The SI7901EDN-T1-E3 is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 6.3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 800µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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