SI7900AEDN-T1-GE3
MOSFET 2N-CH 20V 6A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI7900AEDN-T1-GE3 is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This device features a 20V Drain-to-Source breakdown voltage and a continuous drain current capability of 6A at 25°C. The extremely low on-resistance of 26mOhm at 8.5A and 4.5V Vgs, coupled with a Vgs(th) of 900mV at 250µA, ensures minimal conduction losses. The MOSFET array utilizes a logic level gate, facilitating direct drive from low-voltage microcontrollers. With a maximum power dissipation of 1.5W and a junction temperature range of -55°C to 150°C, the SI7900AEDN-T1-GE3 is suitable for demanding applications in automotive, industrial, and consumer electronics. The component is housed in a PowerPAK® 1212-8 Dual package for efficient thermal management and is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 8.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
