SI7900AEDN-T1-E3
MOSFET 2N-CH 20V 6A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Vishay Siliconix SI7900AEDN-T1-E3 is a TrenchFET® series dual N-channel MOSFET array. This component features a 20V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C. Optimized for low-level gate drive, it offers a maximum On-Resistance (Rds On) of 26mOhm at 8.5A and 4.5V, with a typical Gate Charge (Qg) of 16nC at 4.5V. The device is housed in a PowerPAK® 1212-8 Dual surface mount package, delivering 1.5W of maximum power dissipation. Its operating temperature range is -55°C to 150°C. This MOSFET array is commonly utilized in power management applications across automotive, industrial, and consumer electronics sectors. The configuration is dual N-channel with a common drain.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 8.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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