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SI7872DP-T1-E3

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SI7872DP-T1-E3

MOSFET 2N-CH 30V 6.4A PPAK SO8

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix LITTLE FOOT® MOSFET array, part number SI7872DP-T1-E3, offers a dual N-channel configuration with a 30V drain-source voltage rating. This device features a low Rds(on) of 22mOhm at 7.5A and 10V, and a continuous drain current capability of 6.4A at 25°C. The logic-level gate input simplifies drive requirements. With a maximum power dissipation of 1.4W and a gate charge of 11nC at 4.5V, it is suitable for demanding applications. The MOSFET array is housed in a PowerPAK® SO-8 Dual package, enabling efficient surface mounting. Operating across a temperature range of -55°C to 150°C, this component finds use in automotive, industrial, and power management systems. The device is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8 Dual
Mounting TypeSurface Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.4W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.4A
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePowerPAK® SO-8 Dual

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