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SI7844DP-T1-GE3

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SI7844DP-T1-GE3

MOSFET 2N-CH 30V 6.4A PPAK SO-8

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix MOSFET array, part number SI7844DP-T1-GE3, offers a dual 2 N-Channel configuration. This device features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6.4A at 25°C. The MOSFET array boasts a low Rds(on) of 22mOhm at 10A and 10V, coupled with a logic level gate. With a maximum power dissipation of 1.4W, it is housed in a PowerPAK® SO-8 Dual surface mount package. The gate charge (Qg) is 20nC maximum at 10V, and the threshold voltage (Vgs(th)) is 2.4V maximum at 250µA. This component is commonly utilized in power management applications across the automotive and industrial sectors. It is supplied in Cut Tape (CT) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / CasePowerPAK® SO-8 Dual
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
TechnologyMOSFET (Metal Oxide)
Power - Max1.4W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.4A
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs22mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device PackagePowerPAK® SO-8 Dual

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