SI7844DP-T1-GE3
MOSFET 2N-CH 30V 6.4A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix MOSFET array, part number SI7844DP-T1-GE3, offers a dual 2 N-Channel configuration. This device features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6.4A at 25°C. The MOSFET array boasts a low Rds(on) of 22mOhm at 10A and 10V, coupled with a logic level gate. With a maximum power dissipation of 1.4W, it is housed in a PowerPAK® SO-8 Dual surface mount package. The gate charge (Qg) is 20nC maximum at 10V, and the threshold voltage (Vgs(th)) is 2.4V maximum at 250µA. This component is commonly utilized in power management applications across the automotive and industrial sectors. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.4A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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