SI7844DP-T1-E3
MOSFET 2N-CH 30V 6.4A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix MOSFET, part number SI7844DP-T1-E3, is a dual N-channel device featuring a 30V drain-source voltage and a continuous drain current capability of 6.4A at 25°C. This MOSFET array is constructed using Vishay's advanced trench technology, offering a low Rds(on) of 22mOhm at 10A and 10V, and a maximum power dissipation of 1.4W. The device is designed with a logic level gate, requiring a Vgs(th) of 2.4V at 250µA. Gate charge (Qg) is specified at a maximum of 20nC @ 10V. The SI7844DP-T1-E3 is housed in a PowerPAK® SO-8 Dual package for surface mounting, with packaging supplied in cut tape (CT). This component is suitable for applications in the automotive and industrial sectors requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.4A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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