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SI7842DP-T1-GE3

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SI7842DP-T1-GE3

MOSFET 2N-CH 30V 6.3A PPAK SO8

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix LITTLE FOOT® series SI7842DP-T1-GE3 is a dual N-channel MOSFET housed in a PowerPAK® SO-8 Dual package. This surface-mount device offers a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 6.3A at 25°C. The MOSFET features a logic-level gate, with a gate threshold voltage (Vgs(th)) of 2.4V maximum at 250µA. On-resistance (Rds On) is specified at 22mOhm maximum at 7.5A and 10V gate-source voltage. With a maximum power dissipation of 1.4W and an operating temperature range of -55°C to 150°C, this component is suitable for applications in automotive and industrial sectors requiring efficient power switching. The component is supplied in Tape & Reel packaging.

Additional Information

Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8 Dual
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.4W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.3A
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device PackagePowerPAK® SO-8 Dual

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