SI7842DP-T1-GE3
MOSFET 2N-CH 30V 6.3A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix LITTLE FOOT® series SI7842DP-T1-GE3 is a dual N-channel MOSFET housed in a PowerPAK® SO-8 Dual package. This surface-mount device offers a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 6.3A at 25°C. The MOSFET features a logic-level gate, with a gate threshold voltage (Vgs(th)) of 2.4V maximum at 250µA. On-resistance (Rds On) is specified at 22mOhm maximum at 7.5A and 10V gate-source voltage. With a maximum power dissipation of 1.4W and an operating temperature range of -55°C to 150°C, this component is suitable for applications in automotive and industrial sectors requiring efficient power switching. The component is supplied in Tape & Reel packaging.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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