SI7842DP-T1-E3
MOSFET 2N-CH 30V 6.3A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix LITTLE FOOT® SI7842DP-T1-E3 is a dual N-channel MOSFET array designed for power management applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 6.3A at 25°C. The low on-resistance of 22mOhm maximum at 7.5A and 10V gate-source voltage, combined with a 1.4W maximum power dissipation, makes it suitable for high-efficiency switching. The logic-level gate drive and a gate charge of 20nC at 10V facilitate integration with lower voltage control circuitry. Housed in a PowerPAK® SO-8 Dual surface-mount package, this MOSFET array is ideal for use in automotive, industrial, and consumer electronics power conversion circuits. The operating temperature range is -55°C to 150°C.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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