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SI7842DP-T1-E3

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SI7842DP-T1-E3

MOSFET 2N-CH 30V 6.3A PPAK SO8

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix LITTLE FOOT® SI7842DP-T1-E3 is a dual N-channel MOSFET array designed for power management applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 6.3A at 25°C. The low on-resistance of 22mOhm maximum at 7.5A and 10V gate-source voltage, combined with a 1.4W maximum power dissipation, makes it suitable for high-efficiency switching. The logic-level gate drive and a gate charge of 20nC at 10V facilitate integration with lower voltage control circuitry. Housed in a PowerPAK® SO-8 Dual surface-mount package, this MOSFET array is ideal for use in automotive, industrial, and consumer electronics power conversion circuits. The operating temperature range is -55°C to 150°C.

Additional Information

Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8 Dual
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.4W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.3A
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device PackagePowerPAK® SO-8 Dual

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