SI7540DP-T1-GE3
MOSFET N/P-CH 12V 7.6A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Vishay Siliconix SI7540DP-T1-GE3 is a TrenchFET® series MOSFET array featuring N-channel and P-channel devices in a PowerPAK® SO-8 Dual package. This dual MOSFET offers a continuous drain current of 7.6A for the N-channel and 5.7A for the P-channel, both at 25°C, with a Drain-to-Source Voltage (Vdss) of 12V. It supports logic-level gate drive, with a typical Gate Charge (Qg) of 17nC at 4.5V. The device boasts a low Rds(On) of 17mOhm at 11.8A and 4.5V, and a maximum power dissipation of 1.4W. Operating across a temperature range of -55°C to 150°C, this component is suitable for applications in automotive, industrial, and consumer electronics where efficient power switching is critical. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A, 5.7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 11.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
