SI7540DP-T1-E3
MOSFET N/P-CH 12V 7.6A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET Array SI7540DP-T1-E3 offers a dual N-channel and P-channel configuration, providing 12V drain-source voltage capability. This component features logic-level gate operation and a low Rds(on) of 17mOhm @ 11.8A, 4.5V. With continuous drain currents of 7.6A for the N-channel and 5.7A for the P-channel, it supports up to 1.4W maximum power dissipation. The device is presented in a PowerPAK® SO-8 Dual surface mount package, supplied on tape and reel. Key parameters include a 17nC maximum gate charge at 4.5V and an operating temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in power management, battery-powered devices, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A, 5.7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 11.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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