SI7530DP-T1-E3
MOSFET N/P-CH 60V 3A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix MOSFET N/P-CH 60V 3A PPAK SO-8, part number SI7530DP-T1-E3. This dual N-channel and P-channel MOSFET array offers a 60V breakdown voltage and up to 3.2A continuous drain current per channel. Featuring logic-level gate drive, it achieves a maximum Rds(On) of 75mOhm at 4.6A and 10V. The device dissipates up to 1.5W and is supplied in a PowerPAK® SO-8 Dual surface mount package, presented in cut tape. Applications include power management and battery charging circuits in computing and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W, 1.5W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3A, 3.2A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 4.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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