SI7501DN-T1-GE3
MOSFET N/P-CH 30V 5.4A 1212-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix MOSFET N/P-CH 30V 5.4A 1212-8, part number SI7501DN-T1-GE3, is a dual MOSFET array featuring N and P-channel devices with a common drain configuration. This component is designed for surface mounting within the PowerPAK® 1212-8 Dual package. It offers a continuous drain current of 5.4A for the N-channel and 4.5A for the P-channel, with a maximum drain-to-source voltage of 30V. The device supports logic-level gate drive and has a typical gate charge of 14nC at 10V. The on-resistance (Rds On) is specified at a maximum of 35mOhm at 7.7A and 10V. This Vishay Siliconix MOSFET array is suitable for applications in the automotive and industrial sectors, where efficient switching and power management are critical. The component is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel, Common Drain |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.6W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A, 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 7.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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