SI7501DN-T1-E3
MOSFET N/P-CH 30V 5.4A 1212-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI7501DN-T1-E3 is a dual N-channel and P-channel MOSFET array designed for power management applications. This device features a 30V drain-source voltage rating and can handle continuous drain currents of 5.4A for the N-channel and 4.5A for the P-channel, both at 25°C. The low on-resistance of 35mOhm at 7.7A and 10V facilitates efficient power transfer. Operating with a logic level gate, it offers reduced drive voltage requirements. The PowerPAK® 1212-8 Dual package provides a compact footprint for surface mounting. This component is suitable for use in automotive, industrial, and consumer electronics where space-constrained power switching is critical. The Vishay Siliconix SI7501DN-T1-E3 is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel, Common Drain |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.6W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A, 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 7.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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