SI7270DP-T1-GE3
MOSFET 2N-CH 30V 8A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET Array, part number SI7270DP-T1-GE3, offers a dual 2 N-channel configuration with a 30V drain-to-source voltage (Vdss). This surface mount component features a low Rds(on) of 21mOhm at 8A and 10V, suitable for high-efficiency power switching applications. Key parameters include a continuous drain current (Id) of 8A, a maximum power dissipation of 17.8W, and a gate charge (Qg) of 21nC at 10V. The device operates across a temperature range of -55°C to 150°C and is supplied in a PowerPAK® SO-8 Dual package on tape and reel. This MOSFET array is commonly utilized in power management, battery charging, and consumer electronics sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 17.8W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 15V |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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