SI7252DP-T1-GE3
MOSFET 2N-CH 100V 36.7A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI7252DP-T1-GE3 is a dual N-channel MOSFET array in a PowerPAK® SO-8 Dual package. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 36.7A at 25°C. The low on-resistance, 18mOhm maximum at 15A and 10V, combined with a logic level gate, makes it suitable for power management applications. With a maximum power dissipation of 46W and an operating temperature range of -55°C to 150°C, this MOSFET array is engineered for demanding environments. Key parameters include a gate charge (Qg) of 27nC maximum at 10V and an input capacitance (Ciss) of 1170pF maximum at 50V. This component is commonly utilized in automotive, industrial power, and power supply designs. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 46W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 36.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 1170pF @ 50V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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