SI7236DP-T1-GE3
MOSFET 2N-CH 20V 60A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI7236DP-T1-GE3 is a TrenchFET® series dual N-channel Power MOSFET designed for high-efficiency power management applications. This component features a 20V drain-source voltage rating (Vdss) and can handle a continuous drain current (Id) of 60A at 25°C. The device offers a low on-resistance (Rds On) of 5.2mOhm at 20.7A and 4.5V, contributing to reduced conduction losses. With a maximum power dissipation of 46W and a gate charge (Qg) of 105nC at 10V, it is suitable for demanding switching applications. The input capacitance (Ciss) is rated at 4000pF maximum at 10V. This MOSFET array is provided in a PowerPAK® SO-8 Dual package for surface mounting, facilitating compact board designs. Operating temperature range is from -55°C to 150°C. This component is commonly utilized in automotive, industrial, and server power supply designs.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 46W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 60A |
| Input Capacitance (Ciss) (Max) @ Vds | 4000pF @ 10V |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 20.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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