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SI7236DP-T1-GE3

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SI7236DP-T1-GE3

MOSFET 2N-CH 20V 60A PPAK SO8

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix SI7236DP-T1-GE3 is a TrenchFET® series dual N-channel Power MOSFET designed for high-efficiency power management applications. This component features a 20V drain-source voltage rating (Vdss) and can handle a continuous drain current (Id) of 60A at 25°C. The device offers a low on-resistance (Rds On) of 5.2mOhm at 20.7A and 4.5V, contributing to reduced conduction losses. With a maximum power dissipation of 46W and a gate charge (Qg) of 105nC at 10V, it is suitable for demanding switching applications. The input capacitance (Ciss) is rated at 4000pF maximum at 10V. This MOSFET array is provided in a PowerPAK® SO-8 Dual package for surface mounting, facilitating compact board designs. Operating temperature range is from -55°C to 150°C. This component is commonly utilized in automotive, industrial, and server power supply designs.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8 Dual
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max46W
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C60A
Input Capacitance (Ciss) (Max) @ Vds4000pF @ 10V
Rds On (Max) @ Id, Vgs5.2mOhm @ 20.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs105nC @ 10V
FET Feature-
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackagePowerPAK® SO-8 Dual

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