SI7236DP-T1-E3
MOSFET 2N-CH 20V 60A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI7236DP-T1-E3 is a dual N-channel power MOSFET designed for high-efficiency power management applications. This device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 60A at 25°C. The low on-resistance (Rds On) of 5.2mOhm at 20.7A and 4.5V (Vgs) minimizes conduction losses, while the 46W maximum power dissipation ensures robust performance. With a gate charge (Qg) of 105nC (max) at 10V and input capacitance (Ciss) of 4000pF (max) at 10V, it facilitates fast switching speeds. The device is housed in a PowerPAK® SO-8 Dual surface mount package, suitable for space-constrained designs. Its operating temperature range of -55°C to 150°C makes it reliable for demanding environments. Applications include DC-DC converters, power supplies, and battery management systems across automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 46W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 60A |
| Input Capacitance (Ciss) (Max) @ Vds | 4000pF @ 10V |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 20.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |