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SI7236DP-T1-E3

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SI7236DP-T1-E3

MOSFET 2N-CH 20V 60A PPAK SO8

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI7236DP-T1-E3 is a dual N-channel power MOSFET designed for high-efficiency power management applications. This device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 60A at 25°C. The low on-resistance (Rds On) of 5.2mOhm at 20.7A and 4.5V (Vgs) minimizes conduction losses, while the 46W maximum power dissipation ensures robust performance. With a gate charge (Qg) of 105nC (max) at 10V and input capacitance (Ciss) of 4000pF (max) at 10V, it facilitates fast switching speeds. The device is housed in a PowerPAK® SO-8 Dual surface mount package, suitable for space-constrained designs. Its operating temperature range of -55°C to 150°C makes it reliable for demanding environments. Applications include DC-DC converters, power supplies, and battery management systems across automotive and industrial sectors.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8 Dual
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max46W
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C60A
Input Capacitance (Ciss) (Max) @ Vds4000pF @ 10V
Rds On (Max) @ Id, Vgs5.2mOhm @ 20.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs105nC @ 10V
FET Feature-
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackagePowerPAK® SO-8 Dual

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