SI7228DN-T1-GE3
MOSFET 2N-CH 30V 26A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix TrenchFET® SI7228DN-T1-GE3 is a PowerPAK® 1212-8 Dual package featuring two N-channel MOSFETs. This component offers a 30V drain-to-source voltage and a continuous drain current of 26A at 25°C, with a maximum power dissipation of 23W. The on-resistance (Rds On) is specified as 20mOhm at 8.8A and 10V. Key parameters include a gate charge (Qg) of 13nC (max) at 10V and input capacitance (Ciss) of 480pF (max) at 15V. The device is designed for surface mounting and operates within a temperature range of -55°C to 150°C. This MOSFET array is commonly utilized in power management applications across various industries, including automotive and industrial electronics. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 23W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 26A |
| Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 15V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |