SI7224DN-T1-GE3
MOSFET 2N-CH 30V 6A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI7224DN-T1-GE3 is a TrenchFET® series dual N-channel MOSFET featuring a 30V drain-source voltage and a continuous drain current of 6A at 25°C. This component offers a low Rds(On) of 35mOhm maximum at 6.5A and 10V Vgs. It is designed with a logic level gate, a maximum gate charge of 14.5nC at 10V, and a maximum input capacitance of 570pF at 15V. The device dissipates a maximum power of 17.8W (or 23W depending on thermal conditions) and operates within a temperature range of -55°C to 150°C. The SI7224DN-T1-GE3 is supplied in a PowerPAK® 1212-8 Dual surface mount package and is available on tape and reel. This MOSFET array is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 17.8W, 23W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 15V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 6.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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