SI7224DN-T1-E3
MOSFET 2N-CH 30V 6A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI7224DN-T1-E3 is a dual N-channel power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 6A at 25°C. The low Rds(on) of 35mOhm at 6.5A and 10V, coupled with a logic level gate, ensures efficient operation with lower drive voltages. The device offers a maximum power dissipation of 17.8W or 23W, depending on the thermal management of the PowerPAK® 1212-8 Dual package. Key electrical parameters include a gate charge (Qg) of 14.5nC (max) at 10V and input capacitance (Ciss) of 570pF (max) at 15V. The operating temperature range is -55°C to 150°C. This surface-mount component is supplied on tape and reel and is utilized in industries such as consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 17.8W, 23W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 15V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 6.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |