SI7222DN-T1-E3
MOSFET 2N-CH 40V 6A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI7222DN-T1-E3 is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This device features a 40V drain-to-source voltage rating and a continuous drain current capability of 6A at 25°C. The MOSFET array offers a low on-resistance of 42mOhm maximum at 5.7A and 10V Vgs, contributing to reduced conduction losses. With a maximum power dissipation of 17.8W and a gate charge of 29nC at 10V, it is suitable for demanding power management tasks. The input capacitance is 700pF maximum at 20V Vds. This component is housed in a PowerPAK® 1212-8 Dual surface mount package, facilitating compact board layouts. It operates across a wide temperature range of -55°C to 150°C. Applications include DC-DC converters, power supplies, and battery management systems in automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 17.8W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 20V |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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