SI7220DN-T1-E3
MOSFET 2N-CH 60V 3.4A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI7220DN-T1-E3 MOSFET dual N-channel device. This surface mount component features a 60V drain-to-source voltage and a continuous drain current of 3.4A at 25°C. With a maximum power dissipation of 1.3W and a low on-resistance of 60mOhm at 4.8A and 10V, it is designed for efficient power switching. The device operates with a logic-level gate and has a gate charge of 20nC maximum at 10V. It is packaged in a PowerPAK® 1212-8 Dual in a Tape & Reel (TR) configuration. The operating temperature range spans from -55°C to 150°C. This MOSFET array is suitable for applications in automotive, industrial, and consumer electronics where compact, high-efficiency power management is critical.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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