SI7218DN-T1-GE3
MOSFET 2N-CH 30V 24A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI7218DN-T1-GE3 is a TrenchFET® series power MOSFET array featuring two N-channel devices in a PowerPAK® 1212-8 Dual surface mount package. This component offers a continuous drain current capability of 24A at 25°C and a drain-to-source voltage (Vdss) of 30V. With a maximum power dissipation of 23W and a low on-resistance of 25mOhm at 8A and 10V, it is optimized for high-efficiency power switching applications. Key electrical characteristics include a gate charge (Qg) of 17nC at 10V and input capacitance (Ciss) of 700pF at 15V. The operating temperature range is -55°C to 150°C. This device is commonly utilized in automotive, industrial power, and consumer electronics sectors. The SI7218DN-T1-GE3 is supplied on a tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 23W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 24A |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 15V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |