SI7214DN-T1-GE3
MOSFET 2N-CH 30V 4.6A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI7214DN-T1-GE3 is a TrenchFET® series dual N-channel MOSFET array. This surface mount device, packaged in a PowerPAK® 1212-8 Dual, offers a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.6A at 25°C. With a maximum power dissipation of 1.3W and a low Rds(On) of 40mOhm at 6.4A and 10V, it is optimized for efficient power switching. The logic level gate feature and a Vgs(th) maximum of 3V at 250µA ensure compatibility with a wide range of gate drive signals. This component finds application in power management, battery charging, and industrial automation. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 6.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |