SI7214DN-T1-E3
MOSFET 2N-CH 30V 4.6A PPAK 1212Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI7214DN-T1-E3 is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 4.6A at 25°C. The device exhibits a low on-resistance of 40mOhm maximum at 6.4A and 10V Vgs, minimizing conduction losses. With a logic level gate, it is suitable for direct interfacing with microcontrollers and low-voltage logic. The PowerPAK® 1212-8 Dual package offers excellent thermal performance with a maximum power dissipation of 1.3W. Key parameters include a gate charge (Qg) of 6.5nC at 4.5V and a threshold voltage (Vgs(th)) of 3V at 250µA. This MOSFET array is commonly employed in power management, battery-powered devices, and automotive systems. The component is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 6.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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