SI6993DQ-T1-GE3
MOSFET 2P-CH 30V 3.6A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI6993DQ-T1-GE3 TrenchFET® MOSFET array, featuring two P-channel transistors in an 8-TSSOP package. This device offers a 30V drain-source voltage rating and supports a continuous drain current of 3.6A at 25°C. The low on-resistance of 31mOhm at 4.7A and 10V, combined with a logic level gate feature, makes it suitable for power management applications. With a gate charge of 20nC at 4.5V and a maximum power dissipation of 830mW, the SI6993DQ-T1-GE3 is designed for efficient operation. Typical applications include power switching and load management in consumer electronics and industrial systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 4.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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