SI6993DQ-T1-E3
MOSFET 2P-CH 30V 3.6A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI6993DQ-T1-E3 is a dual P-channel MOSFET array with a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3.6A at 25°C. This device features a logic-level gate and offers a maximum on-resistance (Rds On) of 31mOhm at 4.7A and 10V. The gate charge (Qg) is a maximum of 20nC at 4.5V, and the threshold voltage (Vgs(th)) is a maximum of 3V at 250µA. With 830mW maximum power dissipation, this MOSFET array is housed in an 8-TSSOP package suitable for surface mounting. The operating temperature range is -55°C to 150°C. This component is commonly employed in battery management, power switching, and load management applications across various industries including consumer electronics and automotive. The SI6993DQ-T1-E3 is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 4.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-TSSOP |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
