SI6983DQ-T1-GE3
MOSFET 2P-CH 20V 4.6A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI6983DQ-T1-GE3 is a 2 P-channel MOSFET array designed for demanding applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.6A at 25°C. The low on-resistance of 24mOhm at 5.4A and 4.5V (Vgs) ensures efficient power delivery. With a logic level gate, it is suitable for direct interfacing with low-voltage control signals. The 8-TSSOP package offers a compact footprint for surface mounting. Key parameters include a maximum power dissipation of 830mW and a gate threshold voltage (Vgs(th)) of 1V at 400µA. Operating across a temperature range of -55°C to 150°C, this device is utilized in automotive and industrial automation sectors. The SI6983DQ-T1-GE3 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 5.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 400µA |
| Supplier Device Package | 8-TSSOP |
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