SI6983DQ-T1-E3
MOSFET 2P-CH 20V 4.6A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI6983DQ-T1-E3 is a 20V, 4.6A dual P-channel TrenchFET® power MOSFET. This device features low on-resistance (Rds(on)) of 24mOhm at 5.4A and 4.5V Vgs, with a maximum power dissipation of 830mW. The SI6983DQ-T1-E3 offers a logic level gate for efficient drive and a gate charge (Qg) of 30nC at 4.5V. Its 8-TSSOP package facilitates surface mounting and is supplied on tape and reel. Operating temperature range is -55°C to 150°C. Applications include battery management, power switching, and load switching in consumer electronics and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 5.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 400µA |
| Supplier Device Package | 8-TSSOP |
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