SI6981DQ-T1-GE3
MOSFET 2P-CH 20V 4.1A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, part number SI6981DQ-T1-GE3, is a dual P-channel device featuring a 20V drain-source voltage rating and a continuous drain current capability of 4.1A at 25°C. This MOSFET array offers a low on-resistance of 31mOhm maximum at 4.8A and 4.5V Vgs, with a logic level gate feature. The device boasts a gate charge of 25nC maximum at 4.5V Vgs and a threshold voltage of 900mV maximum at 300µA. Packaged in an 8-TSSOP (0.173", 4.40mm width) for surface mounting, it dissipates a maximum power of 830mW and operates across a temperature range of -55°C to 150°C. This component is suitable for applications in power management and battery-powered devices.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 4.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 900mV @ 300µA |
| Supplier Device Package | 8-TSSOP |
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