SI6981DQ-T1-E3
MOSFET 2P-CH 20V 4.1A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI6981DQ-T1-E3 is a 20V, 4.1A dual P-channel MOSFET array in an 8-TSSOP package. This surface-mount device features a low Rds(on) of 31mOhm at 4.8A and 4.5V Vgs, with a gate charge of 25nC at 4.5V. The component's logic-level gate input and 830mW power dissipation make it suitable for applications in power management, battery charging, and load switching within the consumer electronics and industrial automation sectors. Operating temperature ranges from -55°C to 150°C. The device is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 4.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 900mV @ 300µA |
| Supplier Device Package | 8-TSSOP |
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