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SI6969DQ-T1-GE3

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SI6969DQ-T1-GE3

MOSFET 2P-CH 12V 8TSSOP

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix TrenchFET® series P-channel MOSFET array, part number SI6969DQ-T1-GE3. This 12V device features a 2 P-channel dual configuration in an 8-TSSOP package, suitable for surface mounting. It offers a low Rds(on) of 34mOhm at 4.6A and 4.5V, and a logic level gate for efficient switching. With a maximum power dissipation of 1.1W and an operating temperature range of -55°C to 150°C, this MOSFET array is a robust solution for applications in consumer electronics and power management. The input capacitance is not specified.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TSSOP (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
Configuration2 P-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.1W
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C-
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs34mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs40nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Supplier Device Package8-TSSOP

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