SI6969DQ-T1-E3
MOSFET 2P-CH 12V 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, part number SI6969DQ-T1-E3, features two P-channel MOSFETs in a single 8-TSSOP package. This device supports a Drain to Source Voltage (Vdss) of 12V and offers a low Rds(on) of 34mOhm at 4.6A and 4.5V, indicating efficient conduction. With a maximum power dissipation of 1.1W, it's suitable for applications requiring compact power switching. The logic-level gate feature simplifies driver requirements. Operating temperature range is -55°C to 150°C. This component is commonly found in consumer electronics and industrial automation. The device is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 4.6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | 8-TSSOP |