SI6969BDQ-T1-GE3
MOSFET 2P-CH 12V 4A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI6969BDQ-T1-GE3 is a dual P-channel MOSFET array with a 12V drain-source voltage rating and a continuous drain current of 4A at 25°C. This device features a low Rds(on) of 30mOhm at 4.6A and 4.5V Vgs, along with a logic-level gate drive capability. The MOSFET array is housed in an 8-TSSOP package for surface mounting and offers a maximum power dissipation of 830mW. Key parameters include a gate charge of 25nC at 4.5V and a threshold voltage of 800mV at 250µA. Operating temperature ranges from -55°C to 150°C. This component is commonly utilized in applications such as battery management, power switching, and load control within the automotive and consumer electronics industries. The device is supplied in a Tape & Reel (TR) package.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | 8-TSSOP |
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