SI6969BDQ-T1-E3
MOSFET 2P-CH 12V 4A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI6969BDQ-T1-E3 is a TrenchFET® series power MOSFET array featuring two P-channel devices in a symmetrical configuration. This 12V device offers a continuous drain current (Id) of 4A at 25°C, with a maximum on-resistance (Rds On) of 30mOhm at 4.6A and 4.5V Vgs. The logic-level gate design ensures compatibility with lower drive voltages. The Vishay Siliconix SI6969BDQ-T1-E3 is packaged in an 8-TSSOP (0.173", 4.40mm width) for surface mounting and operates across a temperature range of -55°C to 150°C. Key electrical parameters include a gate charge (Qg) of 25nC at 4.5V and a threshold voltage (Vgs(th)) of 800mV at 250µA. This component is utilized in applications such as power management, battery charging circuits, and load switching within the consumer electronics and industrial automation sectors. The device is supplied in a Tape & Reel (TR) package.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | 8-TSSOP |
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