SI6968BEDQ-T1-GE3
MOSFET 2N-CH 20V 5.2A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET array, part number SI6968BEDQ-T1-GE3, features two N-channel devices in a common drain configuration. This 8-TSSOP package component offers a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 5.2A at 25°C. The low Rds(On) of 22mOhm is achieved at 6.5A and 4.5V Vgs, with a logic-level gate for enhanced drive efficiency. Maximum power dissipation is 1W. The device exhibits a gate charge (Qg) of 18nC at 4.5V and a threshold voltage (Vgs(th)) of 1.6V at 250µA. Suitable for applications requiring efficient power switching, this Vishay Siliconix MOSFET array is supplied in tape and reel. Its robust design makes it a valuable component in computing, industrial, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 6.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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